愛(ài)普生高質(zhì)量有源晶振X1G004611A003超級(jí)適合汽車胎壓監(jiān)測(cè)，愛(ài)普生公司是日系晶振品牌的領(lǐng)先者，秉持著創(chuàng)新的理念，持續(xù)不斷向社會(huì)創(chuàng)造價(jià)值，同時(shí)也根據(jù)市場(chǎng)需求調(diào)整與優(yōu)化自身的產(chǎn)品線，并為用戶提供高于用戶滿意度的有源晶振產(chǎn)品，使得EPSON公司贏得無(wú)數(shù)用戶的歡心，這也是愛(ài)普生公司成立初心，始終堅(jiān)守創(chuàng)新型的產(chǎn)品，把控好產(chǎn)品的品質(zhì)，做到嚴(yán)于律己，精益求精。主要向市場(chǎng)提供的晶振產(chǎn)品包含水晶振動(dòng)子，有源晶振，溫補(bǔ)晶振，壓控晶振等產(chǎn)品。

愛(ài)普生高質(zhì)量有源晶振X1G004611A003超級(jí)適合汽車胎壓監(jiān)測(cè)，基于愛(ài)普生晶振解決社會(huì)問(wèn)題的決心，愛(ài)普生已經(jīng)確定了我們公司可以發(fā)揮重要作用的具體領(lǐng)域。使用基于我們獨(dú)特的核心技術(shù)的創(chuàng)新，我們可以提供社會(huì)、環(huán)境和經(jīng)濟(jì)價(jià)值，幫助實(shí)現(xiàn)可持續(xù)發(fā)展和豐富社區(qū)。這個(gè)故事與聯(lián)合國(guó)制定的可持續(xù)發(fā)展目標(biāo)有著相同的目標(biāo)。它旨在強(qiáng)調(diào)我們目標(biāo)的基本原則以及我們?nèi)绾螌?shí)現(xiàn)目標(biāo)。

編碼	Model/型號(hào)	Frequency/頻率	LxWxH/尺寸	Output Wave/輸出方式	Supply Voltage/電源電壓	Ope Temperature/工作溫度
X1G0036410002	SG-211SEE	40.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410003	SG-211SEE	40.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410004	SG-211SEE	11.289600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410005	SG-211SEE	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410006	SG-211SEE	37.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410008	SG-211SEE	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410009	SG-211SEE	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410010	SG-211SEE	38.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410011	SG-211SEE	49.152000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410013	SG-211SEE	19.200000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410014	SG-211SEE	11.289600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410015	SG-211SEE	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410016	SG-211SEE	38.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410017	SG-211SEE	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410018	SG-211SEE	13.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410019	SG-211SEE	24.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410020	SG-211SEE	33.333300 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410022	SG-211SEE	38.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410023	SG-211SEE	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410024	SG-211SEE	38.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 90 °C
X1G0036410025	SG-211SEE	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410026	SG-211SEE	50.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 90 °C
X1G0036410027	SG-211SEE	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 90 °C
X1G0036410028	SG-211SEE	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410030	SG-211SEE	37.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410031	SG-211SEE	12.288000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410032	SG-211SEE	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410033	SG-211SEE	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410034	SG-211SEE	24.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410035	SG-211SEE	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410036	SG-211SEE	4.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410037	SG-211SEE	15.625000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410038	SG-211SEE	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 90 °C
X1G0036410039	SG-211SEE	24.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 90 °C
X1G0036410041	SG-211SEE	50.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410042	SG-211SEE	25.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 90 °C
X1G0036410043	SG-211SEE	19.200000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G0036410044	SG-211SEE	37.125000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G0036410045	SG-211SEE進(jìn)口晶振	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.600 to 2.200 V	-20 to 70 °C
X1G004611A002	SG-210SEBA	19.200000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A003	SG-210SEBA	27.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 125 °C
X1G004611A004	SG-210SEBA	20.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 125 °C
X1G004611A005	SG-210SEBA	27.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A006	SG-210SEBA	26.973027 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A007	SG-210SEBA	37.500000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A010	SG-210SEBA	20.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A011	SG-210SEBA	40.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A012	SG-210SEBA	24.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A013	SG-210SEBA	33.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A014	SG-210SEBA	16.666600 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A016	SG-210SEBA	14.000000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A017	SG-210SEBA	37.125000 MHz	2.50 x 2.00 x 0.90 mm	CMOS	1.600 to 2.200 V	-40 to 105 °C

根據(jù)市場(chǎng)的需求，愛(ài)普生公司用心專研當(dāng)下的需求，針對(duì)性發(fā)布編碼X1G004611A003，石英晶體振蕩器，型號(hào)SG-210SEBA，尺寸為2520mm，頻率為27MHZ，電壓1.6~2.2V，輸出CMOS，頻率穩(wěn)定度10ppm，工作溫度-40to125°C，具備良好的耐壓性能和高可靠性能，非常適合用于汽車胎壓監(jiān)測(cè)，羅拉模塊，通信模塊，儀器設(shè)備，無(wú)線藍(lán)牙，智能家居等領(lǐng)域.