愛普生發布5G室外基站控制器溫補晶振X1G006061009514，愛普生通過應用其多年來開發的高效、緊湊和精密技術來解決挑戰，尋求推進工業前沿并推動循環經濟。這些技術可以節省能源、實現更小的產品并提高準確性和精度，使愛普生有源晶振能夠為可持續發展目標 (SDG) 做出貢獻，從而為所有人帶來更美好、更可持續的未來。
愛普生公司推出了TG-5510CB晶振，溫補晶振編碼X1G006061009514，頻率20.000000兆赫，輸出WaveCMOS，電源電壓3.13 ~ 3.46 V，電源電壓(一般)3.300 V，尺寸(LxWxH)5.0 x 3.2 x 1.5 mm，操作溫度-40至+85°C，頻率公差+/- 1.0 ppm，說明- TG-5510CB是一種高穩定性TCXO可與任何一種CMOS或裁剪正弦輸出，5G基站和邊緣計算可調至+85℃，需要戶外安裝，小型化和無風扇操作，與其他tcxo相比，它提供了各種改進，如由于低溫的坡度和相位噪聲，符合GR-1244-CORE Stratum3和G.8262.1, G.8273.2 (A類，B類)，注意:本產品沒有電壓控制(Vc)功能，應用程序：網絡設備，5G室外基站控制器，微波，同步遵從性標準，Stratum3，SyncE，IEEE1588，具備良好的耐壓性能以及可靠性能。

愛普生晶振原廠編碼	Model	Frequency	LxWxH	Output Wave	Supply Voltage	F.Tol@25°C	Ope Temperature
X1G006021000314	TG5032CKN	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061004514	TG-5510CB	25.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +105 °C
X1G006061004814	TG-5510CB	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +105 °C
X1G006061007614	TG-5510CB	30.720000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061008214	TG-5510CB	38.400000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009014	TG-5510CB	25.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009214	TG-5510CB	25.600000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009414	TG-5510CB	12.800000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009514	TG-5510CB	20.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009714	TG-5510CB	50.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G006061009814	TG-5510CB	10.000000 MHz	5.00 x 3.20 x 1.50 mm	CMOS	3.135 to 3.465 V	+/-1.0 ppm	-40 to +85 °C
X1G005241000200	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000300	TG5032SGN	25.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000400	TG5032SGN	40.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000700	TG5032SGN	10.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000800	TG5032SGN	26.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241000900	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001000	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001200	TG5032SGN	19.200000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	2.700 to 3.000 V	+/-1.0 ppm	-40 to ++85 °C
X1G005241001300	TG5032SGN	40.000000 MHz	5.00 x 3.20 x 1.45 mm	Clipped sine wave	3.135 to 3.465 V	+/-1.0 ppm	-40 to ++85 °C